M91 FastHall materials and measurement applications
Materials
Solar cells
OPVs, a:Si, µc-Si, CdTe, CuInGaSe (CIGS)
Organic electronics
OTFTs, Pentacene, Chalcogenides, OLEDs
Transparent conducting oxides
InSnO (ITO), ZnO, GaZnO, InGaZnO (IGZO)
III-V semiconductors
InP, InSb, InAs, GaN, GaP, GaSb, AIN based devices, high electron mobility transistors (HEMTs) and heterojunction bipolar transistors
II-VI semiconductors
CdS, CdSe, ZnS, ZnSe, ZnTe, HgCdTe
Elemental semiconductors
Ge, Si on insulator devices (SOI), SiC, doped diamond SiGe based devices: HBTs and FETs
Dilute magnetic semiconductors
GaMnAs, MnZnO
Half-Heusler compounds
TiNiSn, ZrNiSn, GdPtBi
Topological semi-metals
TaAs, WTe2, MoTe2
Topological insulators
Bi2Te3, Bi2Se3, Sb2Te3
Transition-metal Di-chalcogenides (TMDC)
WS2, WSe2, MoS2, HfS2
Other 2D materials
BN, graphene structures
Other conducting materials
Metal oxides
Organic and inorganic conductors
High temperature superconductors
Measurement applications
Hall voltage
- Resolution = 1 µV
- Noise = 0.1 µV (RMS), averaged over 1 power line cycle
Resistance/resistivity (four-contact in-line probe and van der Pauw)
- Calculated by instrument
- Resistance range 100 µΩ to 10 MΩ standard
- Up to 200 GΩ with high-resistance option
Magnetoresistance
- System provides field control to measure resistance as a function of magnetic field are saved to file
Hall coefficient
- Calculated by instrument
- Derived from Hall voltage, magnetic field, and current
Hall mobility
- Calculated by instrument
- 10-3 to 106 cm2/V s
Anomalous Hall effect (AHE)
- System provides field control to measure Hall voltage as a function of magnetic field
Carrier type/concentration/density
- Sheet or volume carrier concentration calculated
- Sheet carrier density ≤1017 cm-2 (carrier density depends on measurement parameters)
