Sensor Temperature Range (sensors sold separately)
Cernox® thin-film RTDs offer high sensitivity and low magnetic field-induced errors over the 0.1 K to 420 K temperature range. Cernox sensors require calibration.
Platinum RTDs offer high uniform sensitivity from 30 K to over 800 K. With excellent reproducibility, they are useful as thermometry standards. They follow a standard curve above 70 K and are interchangeable in many applications.
Silicon diodes are the best choice for general cryogenic use from 1.4 K to above room temperature. Silicon diodes are economical to use because they follow a standard curve and are interchangeable in many applications. They are not suitable for use in ionizing radiation or magnetic fields.
Capacitance sensors are ideally suited for use in strong magnetic fields because they exhibit virtually no magnetic field dependence. They can be used from 1.4 K to 290 K.
| Model | Useful range | Magnetic field use | ||
| Negative Temperature Coefficient RTDs | Cernox® | CX-1010-HT | 0.1 K to 420 K1,2 | T > 2 K & B ≤ 19 T |
| Cernox® | CX-1030-HT | 0.3 K to 420 K1,2 | T > 2 K & B ≤ 19 T | |
| Cernox® | CX-1050-HT | 1.4 K to 420 K1 | T > 2 K & B ≤ 19 T | |
| Cernox® | CX-1070-HT | 4 K to 420 K1 | T > 2 K & B ≤ 19 T | |
| Cernox® | CX-1080-HT | 20 K to 420 K1 | T > 2 K & B ≤ 19 T | |
| Germanium | GR-300-AA | 0.3 K to 100 K | Not recommended | |
| Germanium | GR-1400-AA | 1.4 K to 100 K | Not recommended | |
| Rox™ | RX-102B | 0.1 K to 40 K2 | T > 2 K & B ≤ 10 T | |
| Rox™ | RX-103 | 1.4 K to 40 K | T > 2 K & B ≤ 10 T | |
| Rox™ | RX-202 | 0.1 K to 40 K2 | T > 2 K & B ≤ 10 T | |
| Positive Temperature Coefficient RTDs | 100 Ω platinum | PT-102/3 | 14 K to 873 K | T > 40 K & B ≤ 2.5 T |
| 100 Ω platinum | PT-111 | 14 K to 673 K | T > 40 K & B ≤ 2.5 T | |
| Rhodium-iron | RF-800-4 | 1.4 K to 500 K | T > 77 K & B ≤ 8 T | |
| Diodes | Silicon diode | DT-670-SD | 1.4 K to 500 K | T ≥ 60 K & B ≤ 3 T |
| Silicon diode | DT-670E-BR | 30 K to 500 K | T ≥ 60 K & B ≤ 3 T | |
| Silicon diode | DT-414 | 1.4 K to 375 K | T ≥ 60 K & B ≤ 3 T | |
| Silicon diode | DT-421 | 1.4 K to 325 K | T ≥ 60 K & B ≤ 3 T | |
| Silicon diode | DT-470-SD | 1.4 K to 500 K | T ≥ 60 K & B ≤ 3 T | |
| Silicon diode | DT-471-SD | 10 K to 500 K | T ≥ 60 K & B ≤ 3 T | |
| GaAlAs diode | TG-120-P | 1.4 K to 325 K | T > 4.2 K & B ≤ 5 T | |
| GaAlAs diode | TG-120-PL | 1.4 K to 325 K | T > 4.2 K & B ≤ 5 T | |
| GaAlAs diode | TG-120-SD | 1.4 K to 500 K | T > 4.2 K & B ≤ 5 T | |
| Capacitance | CS-501 | 1.4 K to 290 K | T > 4.2 K & B ≤ 18.7 T | |
| Thermocouples | Type K | 9006-006 | 3.2 K to 1505 K | Not recommended |
| Type E | 9006-004 | 3.2 K to 934 K | Not recommended | |
| Chromel-AuFe 0.07% | 9006-002 | 1.2 K to 610 K | Not recommended | |
1 Non-HT version maximum temperature: 325 K
2 Low temperature specified with self-heating error: ≤5 mK