Lake Shore Cryotronics will be presenting on a novel, highly accurate technique for accelerated Hall effect measurements at next week’s 59th Electronic Materials Conference (EMC) at the University of Notre Dame in South Bend, IN.
Lake Shore Senior Application Scientist Dr. Jeffrey Lindemuth, who has spent several years refining and validating material measurements using the technique, will discuss it in detail during a poster presentation entitled, “FastHall™—A High Speed Hall Measurement for Material Characterization.”
In addition, Lindemuth will also present on “Transient Hall Effect Characterization of Photogenerated Carriers in GaN/AlGaN 2DEGs,” detailing research performed by Dr. David Daughton, fellow application scientist at Lake Shore. This work documents the time-dependent effects observed while using the FastHall technique.
Also, during the EMC exhibit, Lake Shore will be answering questions about their material characterization products, including their:
- New MeasureReady™ Model 155 precision I/V source. Ideal for any research lab requiring a precise, low-noise supply of current or voltage, this innovative source provides a solid foundation for I/V curve, Hall effect, and other fundamental material measurements. It also offers simple, intuitive operation, with a smartphone-based touchscreen for its user interface. Visit the Lake Shore booth to see the source.
- 8400 Series Hall effect measurement systems. Ideal for a broad range of research applications, particularly those requiring temperature-dependent (15 K to 1273 K) measurements, these 4- or 7-inch magnet systems can be ordered with an AC field Hall option for measuring materials with mobilities down to 0.001 cm2/V s. Also available: high resistance and low resistance measurement options, and a version of the system integrated with a cryogenic probe station (Model 8425).
- Cryogenic probe stations. Designed for on-wafer probing of material samples as a function of temperature and field, the stations can be specified with probes for electro-optical, DC, RF, and microwave measurements, as well as a new THz-frequency probe arm, which enables precise probing of millimeter wave devices at 75 to 110 GHz or 140 to 220 GHz frequencies for next-generation electronics R&D.