Featuring patented* FastHall technology, the M91 fundamentally changes Hall effect characterization by eliminating applied magnetic field polarity switching. This results in faster, more accurate measurements, especially with high field superconducting
magnets or low mobility materials.
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Non-destructive Hall measurement of wafer-scale materials in a tightly controlled cryogenic environment
Advancing materials research
Featuring the latest in Lake Shore Hall measurement capabilities, the Model 8425 is ideal for a number of applied physics, electrical engineering, materials research, and product R&D applications. Measure electronic and magneto-transport properties
of novel materials, including:
- III-V semiconductors—InP, InSb, InAs, GaN, GaP, GaSb, AIN-based devices, high-electron mobility transistors (HEMTs), heterojunction bipolar transistors
- II-VI semiconductors—CdS, CdSe, ZnS, ZnSe, ZnTe, HgCdTe
- Elemental semiconductors—Ge, Si on insulator devices (SOI), SiC, doped diamond SiGe-based devices (HBTs and FETs)
- High-temperature superconductors
Direct and derived measurements as a function of field and temperature
- Hall voltage
- IV curve measurements
- Resistance
- Magnetoresistance
- Magnetotransport
- Hall coefficient
- Hall mobility
- Anomalous Hall effect (AHE)
- Carrier type/concentration/density
